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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5669 DESCRIPTION With TO-3PN package Complement to type 2SA2031 Wide area of safe operation Large current capacitance APPLICATIONS For audio frequency output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 250 Collector-base voltage Open emitter Collector-emitter voltage Open base 230 6 15 30 Ta=25ae 2.5 Emitter-base voltage Collector current Collector current-peak Open collector UNIT V V V A A PC Collectorl power dissipation TC=25ae 140 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC5669 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE= 230 V V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 250 V V(BREBO Emitter-base breakdown voltage IE=5mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=7.5 A;IB=0.75A 0.2 2.0 V VBE Base-emitter saturation voltage IC=7.5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=250V; IE=0 100 |I A IEBO hFE-1 hFE-2 COB fT TOR NDU ICO E SEM ANG INCH DC current gain IC=1A ; VCE=5V 60 160 DC current gain IC=7.5A ; VCE=5V 35 Output capacitance IE=0 ; VCB=10V,f=1MHz 200 Transition frequency IC=1A ; VCE=5V 15 Turn-on time IC=7.5A;RL=6.67| IB1=-IB2=0.75A VCC=50V 0.56 Emitter cut-off current VEB=4V; IC=0 100 |I A pF MHz Switching times ton |I s tstg Storage time 3.3 |I s tf Fall time 0.4 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5669 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5669 TOR NDU ICO E SEM ANG INCH 4 |
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